EBeam Lithographer

Description

The University has a requirement for an Electron Beam lithography system which has an acceleration voltage of at least 200 kV. It must be capable of the following: a) Ultra-fine line lithography: 3 nm linewidth, using commercially available resists. This can be obtained by its single-nm digit beam diameter. b) Ultra-high position accuracy: This can be obtained by a laser interferometer with Å (sub-1 nm) reading resolution, enabling a stitching accuracy of ±8 nm and overlay accuracy of ±8 nm. c) Uniform fine pattern writing over entire field: Uniform nm-scale lines can be drawn from edge to…